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2SK2800 Silicon N Channel MOS FET High Speed Power Switching ADE-208-513G (Z) 8th. Edition June 1, 1998 Features * Low on-resistance R DS(on) = 15 m typ. * High speed switching * Low drive current * 4V gate drive device can be driven from 5V source Outline TO-220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SK2800 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note 3 Note 3 Note 2 Note1 Ratings 60 20 40 160 40 40 137 50 150 -55 to +150 Unit V V A A A A mJ W C C EAR Pch Tch Tstg 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 2 2SK2800 Electrical Characteristics (Ta = 25C) Item Symbol Min 60 20 -- -- 1.5 -- -- 20 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 15 25 35 1500 720 200 20 180 200 200 0.95 70 Max -- -- 10 10 2.5 20 40 -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF ns ns ns ns V V I F = 40A, VGS = 0 I F = 40A, VGS = 0 diF/ dt =50A/s Test Conditions I D = 10mA, VGS = 0 I G = 100A, VDS = 0 VGS = 16V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1mA, VDS = 10V I D = 20A, VGS = 10V Note4 I D = 20A, VGS = 4V Note4 I D = 20A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz I D = 20A, RL = 1.5 VGS = 10V Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test V(BR)GSS I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK2800 Main Characteristics Power vs. Temperature Derating 100 Pch (W) 1000 I D (A) 300 100 30 Drain Current 50 10 3 1 0.3 0 50 100 150 Tc (C) 200 Maximum Safe Operation Area 75 PW DC Op er Channel Dissipation = 10 on 10 s 0 1m s s 10 ms (1 sh ot) ) ati 25 Operation in this area is limited by R DS(on) (T c= 25 C Case Temperature Ta = 25 C 0.1 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) Typical Output Characteristics 50 10 V 6V 4.5 V 50 4V Pulse Test 30 3.5 V 20 (A) Typical Transfer Characteristics V DS = 10 V Pulse Test I D (A) 40 40 ID 30 Drain Current Tc = 75C 25C Drain Current 20 -25C 10 10 VGS = 3 V 0 2 4 6 Drain to Source Voltage 8 V DS (V) 10 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 4 2SK2800 Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.2 0.1 Drain to Source Saturation Voltage V DS(on) (V) Pulse Test 1.6 1.2 I D = 50 A Drain to Source On State Resistance R DS(on) ( ) 2.0 0.05 VGS = 4 V 0.8 0.02 0.01 10 V 0.4 20 A 10 A 12 4 8 Gate to Source Voltage 16 20 V GS (V) 0.005 1 2 10 50 5 20 Drain Current I D (A) 100 0 Static Drain to Source on State Resistance R DS(on) ( ) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.05 Pulse Test 0.04 I D = 20 A 10 A Forward Transfer Admittance vs. Drain Current 100 50 Tc = -25 C 20 10 5 75 C 25 C 0.03 V GS = 4 V 0.02 50 A 10, 20 A 10 V 0.01 0 -40 2 1 1 2 V DS = 10 V Pulse Test 10 20 50 5 Drain Current I D (A) 100 0 40 80 120 160 Case Temperature Tc (C) 5 2SK2800 Body-Drain Diode Reverse Recovery Time 1000 5000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Reverse Recovery Time trr (ns) Capacitance C (pF) 500 200 100 50 20 10 0.1 2000 1000 500 Ciss Coss 200 100 50 di / dt = 50 A / s V GS = 0, Ta = 25 C 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) Crss 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics V DS (V) V GS (V) 100 I D = 40 A V DD = 10 V 25 V 50 V V DS 20 1000 300 100 30 10 3 1 0.1 t d(off) tf tr t d(on) Drain to Source Voltage 60 V GS 12 40 8 20 V DD = 50 V 25 V 10 V 8 16 24 32 Gate Charge Qg (nc) 4 0 40 Gate to Source Voltage Switching Time t (ns) 80 16 V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1 % 0.3 1 3 Drain Current 10 30 I D (A) 100 0 6 2SK2800 Reverse Drain Current vs. Source to Drain Voltage Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) 50 200 I AP = 40 A V DD = 25 V duty < 1 % Rg > 50 Reverse Drain Current I DR (A) 40 10 V 30 5V 20 V GS = 0, -5 V 160 120 80 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) 40 0 25 50 75 100 125 150 Channel Temperature Tch (C) Avalanche Test Circuit EAR = Avalanche Waveform 1 2 * L * I AP * 2 VDSS VDSS - V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin 15 V D. U. T 50 0 VDD 7 2SK2800 Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 2.5 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu ho 1s D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr 8 2SK2800 Package Dimensions (Unit: mm) 10.160.2 2.79 0.2 1.27 9.5 8.0 6.4 - 0.1 + 0.2 f 3.6 - 0.08 + 0.1 4.440.2 1.260.15 18.5 0.5 1.20.1 1.270.1 1.5 max 14.0 0.5 0.50.1 7.8 0.5 0.76 0.1 15.0 0.3 2.54 0.5 2.54 0.5 2.7 max Hitachi Code TO-220AB SC-46 EIAJ -- JEDEC 9 2SK2800 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 Copyright (c) Hitachi, Ltd., 1997. All rights reserved. Printed in Japan. 10 |
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